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Telecom Power Vds 650V RDS38mΩ Fast Recovery Diode Mosfet
Pieces
Negotiable
Product information
High-quality Telecom Power Vds 650V RDS38mΩ Fast Recovery Diode Mosfet supplied by Shanghai Winture Electric Co., Ltd.. Bulk wholesale pricing is negotiable. Inquiry for latest prices.
Package Gross Weight:
2.000kg
Production Capacity:
20K/Monthly
Specification:
35x30x37mm
Package Size:
59.00cm * 13.00cm * 11.00cm
HS Code:
854129000
Cooling Method:
Air Cooled Tube
Application:
Car Inverter
Transport Package:
Carton
Specifications
Package Gross Weight:
2.000kg
Production Capacity:
20K/Monthly
Specification:
35x30x37mm
Package Size:
59.00cm * 13.00cm * 11.00cm
HS Code:
854129000
Cooling Method:
Air Cooled Tube
Application:
Car Inverter
Transport Package:
Carton
Origin:
China
Refund Policy:
Claim a refund if your order doesn't ship, is missing, or arrives with product issues.
Shipping Cost:
Contact the supplier about freight and estimated delivery time.
Characteristics:
Excellent Stability and Uniformity
Description:
Extremely Low Switching Loss
Trade Term:
FOB, EXW, CIF, DDP, FCA
Working Frequency:
High Frequency
Payment Term:
LC, T/T, D/P, Western Union
Industries:
LED Lighting
Power Level:
Medium Power
Model NO.:
OSG65R038HZAF TO247
Trademark:
Orientalsemiconductor
Applications:
PC Power
Structure:
Planar
Encapsulation Structure:
Plastic Sealed Transistor
Port Of Loading:
Shanghai
Material:
Silicon
Payment Methods:
Support payments in USD
Function:
Switch Transistor
Business Details
Country:
China
Business Types:
Not specified
Main Markets:
Not specified
Main Products:
Not specified
Year Established:
2019-01-01
Annual Revenue Amount:
Not specified
Numbers Of Employees:
Not specified
Preferred Payment Term:
LC, T/T, D/P, Western Union
Preferred Trade Term:
FOB, EXW, CIF, DDP, FCA
Port Of Loading:
Shanghai
Certificates:
AEC-Q101, international report, patent reward, patented wall, Reach, RoHS
Product descriptions from the supplier
General Description
The GreenMOS®High-voltage MOSFET employs charge balancing to deliver exceptional low on-resistance and reduced gate charge. Designed to cut conduction losses, enhance switching efficiency, and offer strong avalanche resistance.The GreenMOS®Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.
Features
- Low RDS(ON)&FOM
- Extremely low switchingloss
- Excellent stability anduniformity
- Ultra-fast and robust bodydiode
Applications
- PCpower
- Telecompower
- Serverpower
- EVCharger
- Motordriver
Key PerformanceParameters
| Parameter | Value | Unit |
| VDS, min@Tj(max) | 700 | V |
| ID,pulse | 240 | A |
| RDS(ON), max@VGS=10V | 38 | mΩ |
| Qg | 175 | nC |
MarkingInformation
| ProductName | Package | Marking |
| OSG65R038HZF | TO247 | OSG65R038HZ |
Absolute Maximum Ratingsat Tj=25°C unless otherwisenoted
ThermalCharacteristics
Electrical Characteristicsat Tj=25°C unless otherwisespecified
| Parameter | Symbol | Value | Unit |
| Drain-source voltage | VDS | 650 | V |
| Gate-source voltage | VGS | ±30 | V |
| Continuous drain current1), TC=25°C | ID |
80 | A |
| Continuous drain current1), TC=100°C | 50 | ||
| Pulsed drain current2), TC=25°C | ID,pulse | 240 | A |
| Continuous diode forward current1), TC=25°C | IS | 80 | A |
| Diode pulsed current2), TC=25°C | IS,pulse | 240 | A |
| Power dissipation3) ,TC=25 °C | PD | 500 | W |
| Single pulsed avalancheenergy5) | EAS | 2900 | mJ |
| MOSFET dv/dt ruggedness, VDS=0…480V | dv/dt | 100 | V/ns |
| Reverse diode dv/dt, VDS=0…480 V,ISD≤ID | dv/dt | 50 | V/ns |
| Operation and storagetemperature | Tstg,Tj | -55 to150 | °C |
ThermalCharacteristics
| Parameter | Symbol | Value | Unit |
| Thermal resistance, junction-case | RθJC | 0.25 | °C/W |
| Thermal resistance, junction-ambient4) | RθJA | 62 | °C/W |
Electrical Characteristicsat Tj=25°C unless otherwisespecified
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Testcondition |
Drain-sourcebreakdown voltage |
BVDSS |
650 | V |
VGS=0 V, ID=2mA | ||
| 700 | 770 | VGS=0 V, ID=2 mA, Tj=150 °C | ||||
| Gatethreshold voltage |
VGS(th) | 3.0 | 4.5 | V | VDS=VGS, ID=2mA | |
Drain-source on-stateresistance |
RDS(ON) |
0.032 | 0.038 | Ω |
VGS=10 V, ID=40A | |
| 0.083 | VGS=10 V, ID=40 A, Tj=150 °C | |||||
| Gate-sourceleakage current | IGSS |
100 | nA |
VGS=30V | ||
| -100 | VGS=-30V | |||||
| Drain-sourceleakage current | IDSS | 10 | μA | VDS=650 V, VGS=0V | ||
| Gateresistance | RG | 2.1 | Ω | ƒ=1 MHz, Opendrain |
DynamicCharacteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Testcondition |
| Inputcapacitance | Ciss | 9276 | pF | VGS=0 V, VDS=50V, ƒ=100kHz |
||
| Outputcapacitance | Coss | 486 | pF | |||
| Reverse transfercapacitance | Crss | 12.8 | pF | |||
| Effective output capacitance, energy related | Co(er) | 278 | pF | VGS=0 V, VDS=0 V-400 V |
||
| Effective output capacitance, time related | Co(tr) | 1477 | pF | |||
| Turn-on delaytime | td(on) | 55.9 | ns | VGS=10 V, VDS=400 V, RG=2 Ω, ID=40 A |
||
| Risetime | tr | 121.2 | ns | |||
| Turn-off delaytime | td(off) | 114.2 | ns | |||
| Falltime | tf | 8.75 | ns |
Gate ChargeCharacteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Testcondition |
| Total gatecharge | Qg | 175.0 | nC | VGS=10 V, VDS=400 V, ID=40 A |
||
| Gate-source charge | Qgs | 40.1 | nC | |||
| Gate-drain charge | Qgd | 76.1 | nC | |||
| Gate plateauvoltage | Vplateau | 6.4 | V |
Body DiodeCharacteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Testcondition |
| Diode forwardvoltage | VSD | 1.3 | V | IS=80 A, VGS=0V | ||
| Reverse recoverytime | trr | 180 | ns | IS=30A, di/dt=100A/μs |
||
| Reverse recoverycharge | Qrr | 1.5 | uC | |||
| Peak reverse recoverycurrent | Irrm | 15.2 | A |
Note
- Calculated continuous current based on maximum allowable junctiontemperature.
- Repetitive rating; pulse width limited by max. junctiontemperature.
- Pd is based on max. junction temperature, using junction-case thermalresistance.
- The value of RθJAis measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
- VDD=300 V, VGS=10 V, L=40 mH, starting Tj=25°C.
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Supplier Review
Summary by Vivian
TRUST STARS
3.5/5
0 Reviews
Company Verification
0/4
Profile Completeness
56%
Avg. Product Score
0/5
Responsiveness
0%
Certification
AEC-Q101, international report, patent reward, patented wall, Reach
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Frequently Asked Questions (FAQs)
How can I buy & import TVS Diodes from China?
You can contact verified China supplier Shanghai Winture Electric Co., Ltd. through platforms like Freshdi.com to purchase Telecom Power Vds 650V RDS38mΩ Fast Recovery Diode Mosfet. For direct inquiries, please contact Miss Joy Li, the company’s representative. The supplier has a 3.5-star rating on Freshdi and has verified. You’ll receive product details, pricing, and shipping terms directly from supplier.
What are the payments and trade terms for Telecom Power Vds 650V RDS38mΩ Fast Recovery Diode Mosfet?
For Telecom Power Vds 650V RDS38mΩ Fast Recovery Diode Mosfet, Shanghai Winture Electric Co., Ltd. accepts LC, T/T, D/P, Western Union as the preferred payment method, the trade term is FOB, EXW, CIF, DDP, FCA, and shipments are typically arranged from port Shanghai, ensuring secure and timely international delivery.
What is the current price of Telecom Power Vds 650V RDS38mΩ Fast Recovery Diode Mosfet?
The supplier Shanghai Winture Electric Co., Ltd. offers Telecom Power Vds 650V RDS38mΩ Fast Recovery Diode Mosfet at negotiation.
What are the specifications of Telecom Power Vds 650V RDS38mΩ Fast Recovery Diode Mosfet from China?
Telecom Power Vds 650V RDS38mΩ Fast Recovery Diode Mosfet is sourced from China and meets international export standards. Key specifications include: Application: Car Inverter, Specification: 35x30x37mm, Material: Silicon, Origin: China, Description: Extremely Low Switching Loss, Payment Methods: Support payments in USD, Trade Term: FOB, EXW, CIF, DDP, FCA, Payment Term: LC, T/T, D/P, Western Union
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