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China
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No. 218, Xinghu Street
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Business Description
SuzhouNanowinScienceandTechnologyCo.,Ltd(NANOWIN)foundedinSuzhouIndustryPark,ChinainMay,2007,isahigh-techcompanydevotingtofabricatehigh-qualityGalliumNitride(GaN)substratesanddeveloptherelatedtechnologies.NANOWIN'skeyadvantageisunrivaledmaterialsexpertiseowningessentialpatentsinGaNsubstratesandgrowthtechnologies.NANOWINoffersstandardandcustomizedfree-standingGaNsubstratesandthickGaN/sapphiretemplateswithextralowdislocationdensitieswhicharesuitableforapplicationsinhigh-powerLED,blueLDandhigh-powerelectronic/electricdevices.ThemainproductsofNANOWINare2-inchGaN/sapphiretemplateswithGaNthicknessof15to90microns,2-inchfree-standingGaNsubstrateswiththicknessaround350micronsandGafacedislocationdensitywithin106cm-2,smallsquare(sidelength12centimeters/1inch/1.5inch/1.8inch)free-standingGaNsubstrates,non-polarGaNsubstrates(a/mface),high-crystallinityGaNpowderandAlNsubstrates(PSS).AlltheGaNtemplatesandsubstratesproducedbyNANOWINincludethreecategories:N-typedoped,undopedandsemi-insulatingdoped.Ourstrategicgoalistobecomealeadingnitridesemiconductormaterialproviderandapioneerintheindustryapplicationsofnitridesemiconductors
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