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China
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Minhang Shanghai China
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A?Solar energy gear polysilion 1. Base description :silicon deped is 99.9999% 2. Boron doped :<0.20ppba 3. P.phospherus doped:0.90ppba 4. Carbon doped:1.00ppba 5. Metal doped:<30.00ppbab6. Metal surfce doped:<30.00ppba 7. Length :25-250mm 8. Type:p-type 9. Resistivity:>0.50ohmcm B?Break semiconducter silicom wafer Description 1. Base description :break senivonductor silicon wafer 2. Shape:arc 3. Thickness:>=400um 4. Type:P-type 5. Resisfivity:>0.50ohmcn C?Minor Polysilicon Description 1. Type:n-type 2. Resisfivity:50 ohmcn" 3. Carbon iloped:<5*1016/m39 4. Fluorin doped:<5*1017/m3 5. Shape:block 6. Length:>4mm 7. Washing-free is the better with no oxide and infusible substance F?IC materid 1. Washing-free is the better 2. N-type resitivity>10ohcm 3. P-type resitivity>0.5ohcm 4. Shape:block 5. Length:>30mm 6. Thickness:>0.5mm 7. With no infusible subsface and air bubbk
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